Technical document

one, according to classification structure
semiconductor diode is mainly relying on the work of the PN junction. PN junction with an integral point of contact and Schottky type, was also included in the general context of the diodes. These two models, according to PN structure made of the characteristics of the crystal diodes are as follows:

1, point of contact diode
Point of contact in the diode, or silicon germanium material on a single chip pressure contravention of a metal pin, and then through the formation of the current law. Therefore, the PN junction of the small static capacity, apply to high-frequency circuits. However, with the type of guitar, compared to points of contact-diode forward and reverse characteristics are poor, therefore, can not be used in the current and rectification. Because the structure simple, so cheap. For small signal detection, rectifier, modulation, mixing and limiting, and other general purposes, it is the wider application of the type.

2, button-diode
Key-diode or silicon germanium is in the weld on a single chip or silver filaments formed. Its point of contact between the alloy of diodes and diode-between. Point of contact with the comparison, although the keys of the PN junction diode power capacity increased slightly, but the special characteristics of being good. Switching to make more, sometimes also used in detection and power rectifier (not more than 50 mA). In bond-diode, welding wire diode has sometimes been said that the key type, Weld Yinsi diode sometimes referred to as the silver-key.

3, alloy-diode
In the N-type silicon germanium or a single-chip, by indium alloy, aluminum and other metal production methods and the formation of the PN junction. Small forward voltage drop, suitable for high current rectification. PN junction when the reverse of their electrostatic capacity, high-frequency detection and therefore not suitable for high-frequency rectifier.

4, the proliferation of diode
In the P-type high-temperature gas impurities, heating N-type silicon germanium or a single-chip, single-chip into the surface of a P-type, this method PN junction. PN junction due to small forward voltage drop, apply to the current rectification. Recently, the use of high current silicon rectifier the mainstream has been transferred to the alloys of silicon-proliferation.

5, the surface-diode
PN junction Although the production methods and the spread of the same type, but only PN junction and the need to retain some of the unnecessary use of the drugs corrosion swap. The remaining part of the show will be introduced surface, thus its name. The early stage of the production, the proliferation of semiconductor materials and the use made of. So, again such as the proliferation of surface-table type. For this type, it seems that the current use of the Model Rectifier few, and small current switching products used in many models are.

6, flat-diode
In the semiconductor-on-chip (mainly in the N-type monocrystalline silicon-chip), the proliferation of P-type impurities, the use of silicon oxide film on the shielding role in the N-type monocrystalline silicon chip only selectively formed part of the spread of the PN Guitar. Therefore, no adjustment for the PN junction area corrosive effect of drugs. As semiconductor production in the surface were formed, therefore the name. And, PN combination of surface oxide film due to be covered, so that the public good stability and long life type. Initially, the use of the semiconductor material is formed by the extension of law, it again called flat-plane-type extension. The plane-diode, seems to be used in the current rectification of the models used rarely, and switches used for small current models are many.

7, the proliferation of alloy diode
It is a type of alloy. Alloy is vulnerable to the spread of materials. The difficulty of the material produced by cleverly doped with impurities, we can together with the proliferation of alloy, has been formed in order to get the PN junction of the right impurity concentration distribution. This law applies to the manufacture of high sensitivity varactor diodes.

8, extensive diode
With a long extension of the manufacturing process and the formation of the PN junction diodes. At the time of manufacture requires very high technology. Because of impurities can arbitrarily control the distribution of different concentrations, it suitable for the manufacture of high sensitivity of the varactor diodes.

9, Schottky diodes
Basic principle is: in metal (such as lead) and semiconductors (N-type silicon) contact with the surface, has been used to stop the formation of Schottky reverse voltage. Schottky rectifier with the PN junction of the role of a fundamental principle of the difference. Their degree of pressure only about 40 V. Their expertise is: switch very quickly: reverse recovery time trr particular short. Therefore, the switch to the production of very low voltage and high current rectifier diodes.

II, according to use classification

1, with diode detector
On principle, to retrieve from the input signal modulation signal detection is to rectifying the current size (100 mA) as the boundaries are usually less than 100 mA output current is called detection. Germanium material point of contact, operates up to 400 MHz, small forward voltage drop, the junction capacitance of small, high efficiency of detection, the frequency characteristics, and for type 2 AP. Similar point touch with the detector as diodes, except for the detection, but also can be used for limiting, clipping, modulation, mixers, switches and other circuits. FM also for the detection of consistency for a good two diode assembly.

2, with diode rectifier
On principle, in exchange receive input from the DC output is rectifier. Rectifier to the size of current (100 mA) as the boundaries are usually greater than 100 mA output current is called rectification. Guitar-type, frequency of less than KHz, the maximum reverse voltage from 25 volts to 3,000 volts at A ~ X total of 22 stalls. Are as follows: ① silicon rectifier diode 2 CZ-type, ② Silicon Bridge Rectifier QL-type, ③ for the TV frequency high voltage silicon stack of nearly 100 KHz-2 CLG.

3, limiting use diode
Most of diodes can be as limiting use. Also as protection and high-frequency instrument of Zener as the exclusive limiting diode. In order to make these diodes is particularly strong amplitude sharp restrictions on the role, usually created by the use of silicon diodes. This is also the sale of components: Based on the need to limit voltage, the number of the necessary rectifier diodes in series to form a whole.

4, with modulation diode
Usually refers to the ring modulator for the diode. Consistency is the positive characteristics of a good combination of the four diodes. Even if other varactor diodes have modulation purposes, but they are usually used directly as FM.

5, mixing with diode
The use of diode mixer approach, in the 500 ~ 10000 Hz frequency range, multi-use Schottky diodes and point of contact.

6, used to enlarge diode
Larger diodes used, generally have to rely on the tunnel diodes and diode as the effect of negative resistance of the amplification devices and varactor diodes with the parametric amplification. Therefore, to enlarge with diode usually refers to the tunnel diodes, diode and the effect of varying capacity diodes.

7, with diode switches
In a small under current (10 mA level) and using the logical operators in the use of hundreds of milliamperes of core incentive to switch diodes. Small current switching diodes are usually a bit of contact and key-such as diodes, also at high temperatures may also be the work of the silicon-proliferation, and table-flat-diode. The talent is switching diode switch faster. The Schottky-diode switches special short time, so it is ideal diode switches. 2AK point of contact for medium-speed switching circuits used; 2 CK-plane contacts for high-speed circuit switching; for the switch, limiting, such as clamping or detector circuit; Schottky (SBD) high current silicon switch, forward voltage drop Small, fast and efficient.

8, varactor diode
For automatic frequency control (AFC) and tuning with the low-power diode said varactor diodes. Japanese firms also have many other name. Through the imposition of reverse voltage to the PN junction capacitance changes. Therefore, to be used for automatic frequency control, scanning oscillation, and FM tuner, and other uses. Usually, though the proliferation of silicon-based diodes, but may also have alloy-proliferation, the combination of extension, double-proliferation, and other special produced by the diodes, because these diodes for voltage, its capacitance changes in the rate of particularly great. With the reverse voltage junction capacitance changes in VR, replacing variable capacitor, for the tuner circuit, oscillation circuit, PLL, commonly used in TV tuner and the channel conversion tuner circuit, most of silicon material.

9, double the frequency of use diode
Diode on the frequency multiplier effect, have to rely on the frequency modulation diode doubled and depend on the step (that is, radical change) the frequency multiplier diodes. Doubling the frequency modulation diodes used as reactor can be transforming, transforming and automatic reactor while controlling the frequency modulation of the principle of the same diode, but the reactor structure able to withstand high power. Step diode is also known as step recovery diodes, from the on-off switch to the reverse recovery time trr short, therefore, their expertise is rapidly closing time of transfer become significantly short. If you step on diode sine wave, then by tt (transfer time) short, the output waveform Jizhou and was trapped off, it can produce a lot of high-frequency harmonics.

10, regulator diode
Regulators are electronic diodes instead of the product. Produced by the spread of a silicon-based alloys or type. Is the reverse breakdown characteristics of the Jizhou changes diodes. As a control voltage and the use of standard voltage produced. Diode work at the terminal voltage (also known as the Zener voltage) from about 3 V to 150 V, at every 10 percent, to divided into many levels. In power, also from 200 mW to 100 W over the product. Work in reverse breakdown, and silicon production, dynamic resistance RZ is very small, typically 2 CW; two complementary diode reverse series connection to reduce the temperature coefficient of type 2 DW.

11, PIN-diode (PIN Diode)
This is the area in P and N between a folder Intrinsic Semiconductor (or low concentration of impurities in the semiconductor) crystal structure of the diode. PIN I was in the "intrinsic" meaning the English language slightly. When their work at frequencies above 100 MHz, as a minority-carrier effects and storage "intrinsic" of the transit-time effect, lost its diode rectifier role as a resistance device, and, with the partial value of its impedance Purchase voltage change. Zero DC bias or reverse bias, "the sign" zone of high resistance in the DC positive bias, due to carrier into the "intrinsic" areas due to the "intrinsic "District showing a low-impedance state. Therefore, the PIN diode impedance components used as a variable. It is often used in high-frequency switching (that is, microwave switch), the phase-shifting, modulation, such as limiting circuit.

12, avalanche diode (Avalanche Diode)
It is in the applied voltage can be generated under high-frequency oscillations of the transistor. Produce high-frequency oscillations Luan is the working principle: the use of avalanche breakdown into the crystal carrier, the carrier transit-chip needs a certain amount of time, its current lag behind the voltage, a delay time, if appropriate control Transit time, then the relationship between current and voltage will appear on the negative effects of resistance, resulting in high-frequency oscillations. It is often used in the field of microwave oscillation circuit.

13, Jiang Kawasaki diode (Tunnel Diode)
It is the main tunnel effect for the current component of the current crystal diode. Its base material is gallium arsenide and germanium. Its P-type area of N-type area is a high-doped (that is, the high concentration of impurities). Reduction of these tunnels by the current state and the semiconductor generated by the effects of quantum mechanics. A tunnel effect with the following three conditions: ① Fermi level in the conduction band and the full band; ② space charge of the width to be very narrow (0.01-micron below); SR and P-type semiconductor area and N-type zone in the air Point at the same level and the electronic overlap on the possibility. Jiang Kawasaki diodes for the two-terminal active devices. The main parameters of a peak and valley current ratio (IP /PV), which, under the superscript "P" stands for "peak" and subscript "V" on behalf of "Valley." Jiang Kawasaki diodes can be applied to high-frequency low-noise amplifier and high-frequency oscillator (its rates up to mm-band), can also be applied to high-speed switching circuits.

14, to quickly turn off (Step resume) diode (Step Recovary Diode)
It is also a PN junction with the diode. Its structure is characterized by: the PN junction border with steep impurities in the area, to form "self-help field." As PN junction in the positive bias, to a small number of carrier-conductive and PN junction near a storage charge effect, to reverse current need to go through a "storage time" in order to the minimum ( Reverse saturated current value). Step recovery diodes "self-help field" to shorten the storage time, reverse current rapid closing and have a rich harmonic component. Use of these harmonic components can be designed to comb spectrum circuit. Rapid shutdown (Step resume) diode for high pulse and harmonic circuit.

15, Schottky diodes (Schottky Barrier Diode)
It is a Schottky of "metal semiconductor junction," the diodes. Its low voltage positive start. In addition to its metal materials, but also can be used gold, molybdenum, nickel, titanium and other materials. Its use of silicon semiconductor material or gallium arsenide, for more than N-type semiconductor. Such devices are by a majority of the carrier conductive, so its back to a few more saturated current carrier conducting much of the PN junction. As Schottky diodes in a small number of carrier-storage little effect, so its frequency ring for only RC time constant restrictions, thus, it is high and ideal for quick switch. Their rates up to 100 GHz. And, MIS (metal - insulator - semiconductor) Schottky diodes can be used to produce solar cells or light-emitting diodes.

16, damping diode
Has a high peak reverse voltage and current, forward voltage drop small, high-frequency high-voltage rectifier diodes, used to scan the television circuit for damping and boost rectifier used.

17, transient voltage suppression diode
TVP of the rapid over-voltage protection circuitry, the bipolar and unipolar-two, the peak power (500 W-5000W) and voltage (8.2 V ~ 200V) classification.

18, two-base diode (in-hand transistor)
Two base, one emitter of the three-negative resistance device for Zhang Chi oscillation circuit, regularly read out voltage circuit, it is easy to tune the frequency, temperature stability, and other advantages.

19, LED
With gallium phosphide and gallium arsenide materials made from phosphorus, small size, being driven luminescence. Low voltage, current work of small, luminous uniform, long life, red, yellow and green Danse Guang.

three, according to classification of
Point of contact diodes, the forward and reverse characteristics are as follows.

1, with the general point of contact diode
Such diodes, as the title said, is often used in the detection and rectification circuit, is the forward and reverse characteristics are neither particularly good nor particularly bad intermediate products. Such as: SD34, SD46, 1N34A, etc. fall into this category.

2, reverse the high-pressure point contact diode
Is the largest peak reverse voltage and the largest high voltage direct current reverse the product. High-voltage circuits used in the detection and rectification. This type of diode generally positive characteristics of the general good or not. In point of contact germanium diodes, SD38, 1N38A, OA81, and so on. This germanium materials diodes, its pressure is limited. Have higher requirements and the proliferation of silicon alloys.

3, reverse the high resistance point of contact diode
Forward voltage characteristics and generally use the same diode. Although the direction of its anti-Pressure is also particularly high, but the reverse current small, it is the reverse of its long resistance high. The use of high input resistance in the circuit load resistance and high resistance in the circuit, germanium material on the high-diode reverse in terms of resistance, SD54, 1N54A, etc. belong to this type of diode.

4, the high point contact-diode conduction
It reverse resistance and high-contrast. Despite the reverse of its poor, but the positive resistance become small enough. Conduction of the high points of contact diode, there SD56, 1N56A, and so on. Conduction of the key high-diode, to be more fine features. Such diodes, in particular low-load resistance of the circumstances, the rectifier more efficient.